Etching is one of the critical process steps in the fabrication of micro- and nano-scaled devices. Prior to etching, a pattern, usually defined in a temporary photo-sensitive polymer mask material called photoresist, is transferred onto a silicon wafer. One way to etch material, is through the use of plasma. Inductively Coupled Plasma (ICP), is distinct for its coil that shapes plasma and DC bias coupling for directionality. The machine has high etch rates and is used to etch oxide. Specifically for this project ICP-F (Fluorine) has been used. During etching, a photoresist reticulation problem has occurred. With this reticulation, features on the wafer are degraded, when reticulation is wide spread, the whole wafer must be stripped and restarted. This problem affects the speed and quality of production of wafers. In attempts to fix this problem, different variables such as the DC bias, chuck temperature, He backing, and RF power are monitored. Furthermore, the effects of varying pre-etch conditions, such as wafer bakes and different wait times, are examined to determine if there is a correlation between moisture in the photoresist film and resist reticulation or if the issues are predominately related to the etching system. Different inspection steps are made to ensure the quality of the etch, such as visual inspections and measurements of etch depths. These inspection steps concludes how much reticulation has occurred and what it has affected. ICP-F etching is just one step of the process in of fabrication of micrometer scale inductors and capacitors directly on the top of silicon wafers referred to as Integrated Passive Devices (IPD). This process decreases the amount of space used and increases the bandwidth of radio frequency (RF) analog filtering and the speed of digital information transfers.